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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 FEATURES Power dissipation TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 0. 0. 95 A 025 2. 80 A 05 0. 1. 60 A0. 05 PCM: 0.35 W (Tamb=25) 1. 9 Collector current 0.2 A ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) HFE(3) VCE(sat) Collector-emitter saturation voltage VCE(sat) Base-emitter sataration voltage VBE(sat) IC=50 mA, IB=5mA IC=10 mA, IB= 1 mA VCE=20V, IC=10mA Transition frequency f T unless otherwise specified) Test conditions MIN 400 400 5 0.1 5 0.1 80 70 60 0.2 0.3 0.75 V V V 300 TYP MAX UNIT V V V A A A Ic= 100A, IE=0 IC= 1mA , IB=0 IE=100A, IC=0 VCB=400V, IE=0 VCE=400V VEB= 4V, IC=0 VCE=10V, IC=10 mA VCE=10V, IC=1mA VCE=10V, IC=100 mA IC=10 mA, IB=1mA 50 f =30MHz MHz MARKING 3D 0. 35 2. 92 A0. 05 |
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